发明名称 |
Mask ROM and method of fabricating the same |
摘要 |
A mask read-only memory (ROM) includes a dielectric layer formed on a substrate and a plurality of first conductive lines formed on the dielectric layer. A plurality of diodes are formed in the first conductive lines, and a plurality of final vias are formed for a first set of the diodes each representing a first type of memory cell, with no final via being formed for a second set of diodes each representing a second type of memory cell. Each of a plurality of second conductive lines is formed over a column of the diodes.
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申请公布号 |
US2008003810(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20070823381 |
申请日期 |
2007.06.27 |
申请人 |
LEE YONG-KYU;JEON HEE-SEOG;HAN JEONG-UK;KIM YOUNG-HO;CHUN MYUNG-JO |
发明人 |
LEE YONG-KYU;JEON HEE-SEOG;HAN JEONG-UK;KIM YOUNG-HO;CHUN MYUNG-JO |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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