发明名称 Multi-port memory device with serial input/output interface
摘要 A multi-port memory device includes ports, banks, a global data bus, an input/output (I/O) controller, mode register set (MRS), a clock generator, and a test I/O controller. The I/O controller transmits a test signal to the global data bus in response to a mode register enable signal. The MRS generates a test enable signal in response to the mode register enable signal and outputs a mode selection signal which determines a data transmission mode of a test I/O signal in response to the test signal. The clock generator receives an external clock and generates an internal clock based on the external clock in response to the mode selection signal. The test I/O controller inputs/outputs the test I/O signal in synchronism with the internal clock. The mode register enable signal active during a test operation mode for testing a core area of the banks.
申请公布号 US2008005493(A1) 申请公布日期 2008.01.03
申请号 US20070824440 申请日期 2007.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHUNG JIN-IL;KIM JAE-IL;DO CHANG-HO;HUR HWANG
分类号 G06F12/00 主分类号 G06F12/00
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