发明名称 PLASMA PROCESSING METHOD AND EQUIPMENT
摘要 <p>When a predetermined processing, e.g. a film deposition processing, is performed on a workpiece (W) under the existence of plasma by supplying inert gas and processing gas into a processing container, a step for setting a pressure in the processing container to a pressure capable of igniting plasma by starting inert gas supply into the processing container, a step for starting processing gas supply into the processing container and igniting plasma before it becomes non-ignitable due to an increase in partial pressure of the processing gas, a step for regulating the pressure in the processing container to a process pressure for carrying out the predetermined processing, and a step for carrying out the predetermined processing by altering plasma power supplied in order to ignite and sustain plasma to the value of plasma power for carrying out the predetermined processing, are performed sequentially. Since the predetermined processing is performed effectively on the workpiece immediately after start of the step for carrying out the predetermined processing, throughput can be enhanced sharply.</p>
申请公布号 WO2008001853(A1) 申请公布日期 2008.01.03
申请号 WO2007JP63013 申请日期 2007.06.28
申请人 TOKYO ELECTRON LIMITED;FUKIAGE, NORIAKI 发明人 FUKIAGE, NORIAKI
分类号 H01L21/314;C23C16/52;H05H1/46 主分类号 H01L21/314
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