SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON-ATTRACTING FUNCTIONALITIES

摘要

A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO<SUB>3/2</SUB> units and RSiO<SUB>3/2</SUB> units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.