METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to reduce a thickness of a nitride layer between bit lines by etching partially an etch-stop nitride layer in a trench etching process. An interlayer dielectric(21) and an etch-stop nitride layer(22) are formed on a semiconductor substrate(20). A contact hole is formed by etching the etch-stop nitride layer and the interlayer dielectric. A contact(23) is formed in the contact hole. An oxide layer(24) is formed on the entire surface of the semiconductor substrate including the contact. A trench for exposing the contact and the etch-stop nitride layer adjacent to the contact is formed by etching the oxide layer by using the etch-stop nitride layer as a stopper. A bit line(26) is formed within the trench.