ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF

摘要

An organic thin film transistor substrate and a method for manufacturing the same are provided to protect not only a thin film transistor but also a peripheral region of the TFT by an organic passivation layer formed within a line hole of a bank insulating layer along the gate line, thereby preventing the damage of the organic semiconductor layer and increasing a process margin of an ink-jet device. A gate line and a data line(104) cross each other to define a sub-pixel region. An organic thin film transistor(130) includes a gate electrode(106) connected to the gate line, a source electrode(108) connected to the data line, a drain electrode(110) facing the source electrode, and an organic semiconductor layer(114) for forming a channel between the source electrode and the drain electrode. A passivation layer(120) is formed in parallel with the gate line to cover the organic semiconductor layer and a peripheral region of the organic semiconductor layer. A bank insulating layer(118) has a stepped portion such that the organic semiconductor layer and the passivation layer fill the bank insulating layer.