| 摘要 |
In a circuit area wherein a semiconductor integrated circuit is to be formed, an isolation insulating film is formed on a surface of a semiconductor substrate ( 11 ), and, at the same time, five isolation insulating films ( 12 m) extending in one specific direction are formed within a monitor area ( 1 ) at a fixed spacing. Then, a gate insulation film and a gate electrode are formed within the circuit area on the semiconductor substrate ( 11 ), and, at the same time, five gate insulation films ( 13 m) and five gate electrodes ( 14 m) extending in the same direction as the isolation insulating films ( 12 m) are formed within the monitor area ( 1 ) at the same spacing as that of the isolation insulating films ( 12 m).
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