发明名称 |
INTEGRATION PROCESSES FOR FABRICATING A CONDUCTIVE METAL OXIDE GATE FERROELECTRIC MEMORY TRANSISTOR |
摘要 |
A method of fabricating a conductive metal oxide gate ferroelectric memory transistor includes forming an oxide layer a substrate and removing the oxide layer in a gate area; depositing a conductive metal oxide layer on the oxide layer and on the exposed gate area; depositing a titanium layer on the metal oxide layer; patterning and etching the titanium layer and the metal oxide layer to remove the titanium layer and the metal oxide layer from the substrate except in the gate area; depositing, patterning and etching an oxide layer to form a gate trench; depositing and etching a barrier insulator layer to form a sidewall barrier in the gate trench; removing the titanium layer from the gate area; depositing, smoothing and annealing a ferroelectric layer in the gate trench; depositing, patterning and etching a top electrode; and completing the conductive metal oxide gate ferroelectric memory transistor.
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申请公布号 |
US2008003697(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20050215521 |
申请日期 |
2005.08.30 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LI TINGKAI;HSU SHENG T.;ULRICH BRUCE D. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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