CMOS CIRCUITS COMBINING HIGH VOLTAGE AND RF TECHNOLOGIES
摘要
<p>A CMOS circuit comprises at least one high voltage transistor (having gate and drain operating voltages of greater than 8V) and at least one high frequency capable transistor (having a maximum switching frequency of between 100 MHz and 1000 GHz) wherein said transistors are integrated on the same semiconductor substrate so as to allow the simple integration of high voltage circuits and RF (radio frequency) CMOS circuits on the same integrated circuit.</p>
申请公布号
WO2008001136(A1)
申请公布日期
2008.01.03
申请号
WO2007GB50363
申请日期
2007.06.27
申请人
X-FAB SEMICONDUCTOR FOUNDRIES AG;ELLIS, JOHN NIGEL;STRIBLEY, PAUL RONALD;FU, JUN