| 摘要 |
A peri voltage(VPERI) generator is provided to improve operation speed of a semiconductor memory device by increasing the voltage level of the peri voltage in an active mode. A peri voltage(VPERI) level detector(301) detects a peri voltage(VPERI) in response to an enable signal. A power supply voltage level detector(302) detects a power supply voltage in response to an active mode signal. A first charge part(303) increases the voltage level of the peri voltage in response to an output signal of the peri voltage level detector. A second charge part(304) increases the voltage level of the peri voltage in response to an output signal of the power supply voltage level detector.
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