METHOD OF FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A method for fabricating a semiconductor integrated circuit device is provided to increase productivity by simplifying a fabricating process of the semiconductor integrated circuit device. A hard mask(110a) is formed on a target layer(100) to be etched. A sacrificial hard mask(122a,124a,126b) is formed on the hard mask. A line sacrificial hard mask pattern is formed by patterning the sacrificial hard mask in a first direction in a line and space shape. A polymer organic material(130a) is coated and planarized on the line sacrificial hard mask. The polymer organic material and the line sacrificial hard mask pattern are patterned in the line and space shape in a second direction which is not parallel to the first direction. A matrix sacrificial hard mask pattern is formed by removing the polymer organic material pattern. A hard mask pattern of a matrix type is formed by etching the hard mask. A lower pattern is formed by patterning partially or entirely the etching target layer.