METHOD OF MANUFACTURING A FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to prevent a low dielectric film from being damaged due to oxygen by forming a passivation film on the low dielectric film. A low dielectric film(102), a passivation film, and a photoresist pattern are sequentially formed on a semiconductor substrate(100). The passivation film is etched by using the photoresist pattern as a mask. The photoresist pattern is removed and the dielectric film is etched by using the passivation film as the mask. The passivation film is removed. The low dielectric film is formed by using a spin process or a CVD process. The passivation film is made of a tungsten film or a nitride film.