| 摘要 |
<p>A method of manufacturing a silicon substrate and a method of forming a memory device using the same are provided to decrease a disturbance and a leakage current by minimizing a stress applied on a silicon substrate. An ion injection process is performed to inject fluorine ions into a P-type silicon substrate(100). The fluorine ions are injected, such that a thermal process is performed on the silicon substrate, on which defective crystals are formed. The ion injection process is performed by using a single-type ion injection device. The ion injection process is performed at a high energy between 1.2 and 2 MeV, such that a fluorine ion injection region(120) is formed on a lower layer of the silicon substrate.</p> |
