APPARATUS FOR PLASMA ETCHING PREVENTED HOLE TILTING AND METHOD OF ETCHHING USING THE SAME

摘要

A plasma etching apparatus and a plasma etching method using the same are provided to minimize the change in plasma sheath by extending upward a surface of a focus ring and reducing a distance between a bottom surface of an edge of a wafer and the focus ring. A plasma etching apparatus includes a plasma processing chamber, an electrostatic chuck(101) installed in the plasma processing chamber and receiving a wafer(102), and a focus ring(103) positioned at an edge portion of the electrostatic chuck for surrounding an edge of the wafer. The focus ring has a first region(103A) surrounding the edge of the wafer and a second region(103B) disposed under a bottom surface of the wafer, in which a surface of the first region is disposed at a position higher than that of the wafer. A surface of the second region extends upward as much as an increased height of the first region to reduce a distance between the bottom surface of the edge of the wafer and the second region.