| 摘要 |
A surface-emitting type semiconductor laser is provided to implement a higher power than a power in a case of reducing a diameter of a current narrowing layer. A surface-emitting type semiconductor laser includes a lower mirror(10), an active layer(103) and an upper mirror(20). The active layer is formed on an upper part of the lower mirror. The upper mirror is formed on an upper part of the active layer. The lower mirror and upper mirror are a multi-layer mirror that a plurality of unit multi-layers are stacked. The unit multi-layers have a couple of low refractive index and high refractive index. The unit multi-layers satisfy an equation 1 as following dD< lambda /2nD. The active layer satisfies an equation 2 as following dA<mlambda/2nA. lambda denotes a designed wavelength of the surface-emitting type semiconductor laser. m denotes a positive integer. dD denotes a depth of the unit multi-layer. nD denotes an average refractive index of the unit multi-layer. dA is a depth of the active layer. nA denotes an average refractive index of the active layer.
|
