CONTACT STRUCTURE HAVING A BARRIER LAYER CONTAINING NOBLE METAL, FERROELECTRIC RANDOM ACCESS MEMORY DEVICE EMPLOYING THE SAME AND METHODS OF FABRICATING THE SAME

摘要

A contact structure having a barrier layer containing noble metal, a ferroelectric random access memory device employing the same, and a method for fabricating the same are provided to prevent a lowering effect of polarization characteristics of ferroelectric capacitors by using a noble metal barrier. An interlayer dielectric(116) is formed on an upper surface of a semiconductor substrate(100). A plurality of contact plug(118s',118s",118d) are electrically connected through the interlayer dielectric to the semiconductor substrate. A lower barrier pattern is formed to surround a sidewall and a lower surface of the contact plug. An upper barrier pattern comes in contact with an upper surface of the contact plug. The lower barrier pattern and the upper barrier pattern include noble metal. The contact plug is formed with tungsten.