BUMP FORMING PROCESS OF SEMICONDUCTOR ELEMENT

摘要

A method for forming a bump of a semiconductor device is provided to reduce manufacturing costs by performing a bump manufacturing process. A bump material as a metallic conducting material is coated on an upper surface of a semiconductor element(S100). A bump material layer is formed on the upper surface of the semiconductor element by rotating the semiconductor element in a horizontal state. A mask having a predetermined pattern is arranged on an upper side of the bump material layer(S200). A preliminary bump is formed along the pattern of the mask by irradiating laser beams onto an upper side of the mask and melting only the bump material layer(S300). A cleaning process is performed to remove the residual bump material layer except for the preliminary bump(S400). A bump having a spherical shape is formed by heating the preliminary bump(S500).