| 摘要 |
A voltage booster of a semiconductor device and a semiconductor memory device using the same are provided to output a normally decreased boost voltage without a DC leakage current, by controlling the connection between an external power supply voltage and a boost voltage generation stage using a power save mode enable signal and a power up signal. A level shifter(410) receives a power up signal, and generates a level-shifted power up signal by shifting the level of the power up signal. The power up signal increases according to an internal power supply voltage generated from an external power supply voltage, and then is shifted when the internal power supply voltage reaches a predetermined voltage. An initial boost voltage generation part(420) transmits the external power supply voltage transmitted to an initial boost node during normal operation to a boost voltage generation stage in response to the level-shifted power up signal, and controls the external power supply voltage not to be transmitted to the initial boost node during power save mode operation and drops the voltage level of the initial boost node. A boost voltage generation circuit outputs a boost voltage by pumping charges by the control of the power up signal during the normal operation, and is disabled during the power save mode operation.
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