发明名称 |
Process for curing dielectric films |
摘要 |
<p>The present invention provides a process for forming a porous dielectric film, the process comprising: forming onto at least a portion of a substrate a composite film comprising Si, C, O, H and Si-CH 3 groups, wherein the composite film comprises at least one silicon-containing structure-forming material and at least one carbon-containing pore-forming material; and exposing the composite film to an activated chemical species to at least partially modify the carbon-containing pore-forming material, wherein at least 90% of Si-CH 3 species in the as deposited film remains in the film after the exposing step as determined by FTIR.</p> |
申请公布号 |
EP1873818(A2) |
申请公布日期 |
2008.01.02 |
申请号 |
EP20070111064 |
申请日期 |
2007.06.26 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
WEIGEL, SCOTT JEFFREY;O'NEILL, MARK LEONARD;VRTIS, RAYMOND NICHOLAS;HAAS, MARY KATHRYN;KARWACKI, EUGENE JOSEPH, JR. |
分类号 |
H01L21/3105;C23C16/40;H01L21/316 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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