| 摘要 |
An electronic cooling device and a manufacturing method thereof are provided to operate an image sensor under high temperature by forming a semiconductor electronic cooling device using Peltier effect. A dielectric(20) is formed on a semiconductor substrate(10). First and second silicides(30,31) are formed on the dielectric. A poly-silicon(40) is formed on the semiconductor substrate where the first and second silicides are formed and impurities are implanted therein to form a pair of P-type and N-type semiconductors(41,42) contacted to the first and second silicides. The poly-silicon is removed to separate the P-type semiconductor from the N-type semiconductor. After a first interlayer dielectric(50) is formed on the P-type and N-type semiconductors, upper surfaces of the N-type and P-type semiconductors are exposed. A third silicide(60) is formed on the upper portion of the N-type semiconductor of the first silicide and the upper portion of the P-type semiconductor of the second silicide. A second interlayer dielectric(70) is formed on the semiconductor substrate where the third silicide is formed. The second and first interlayer dielectrics are etched to expose the edge of the first or second silicide and to form a contact hole(80). |
