| 摘要 |
A thin film transistor, a fabrication method thereof and a fabrication method of an LCD including the same are provided to simplify a process by simultaneously patterning an ohmic contact layer and source/drain electrodes of a thin film transistor. A gate dielectric layer(102) is formed on a gate electrode(101). Source/drain electrodes(103a/103b) are formed on the gate dielectric layer. A channel layer(106) contacts a portion of the ohmic contact layer, and is formed on the gate dielectric layer corresponding to the gate electrode. The channel layer is formed of a material including Si5H10(CyclopentaSilane). The ohmic contact layer is formed of at least one of PSG(Phospher-Silicate-Glass), ITO(Indium Tin Oxide) metal, a heavily n-doped amorphous silicon layer and a heavily p-doped amorphous silicon layer. |
