METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to uniformly maintain FICD(Final Inspection Critical Dimension) of a gate by increasing amount of by-products generated in an etching process to apply an EPD(End Point Detection) method. A sacrificial dielectric(111) is formed on a substrate(110) of a first region and a second region. A part of the sacrificial dielectric formed on the second region is etched to expose the substrate. A high voltage gate dielectric(113) is formed on the exposed part of the substrate. The sacrificial dielectric is removed. A low voltage gate dielectric is formed on the substrate of the first region. A gate conductive layer is formed on the low voltage gate dielectric and the high voltage gate dielectric. The gate conductive layer is etched to form a gate for a low voltage transistor on the first region and a gate for a high voltage transistor on the second region at the same time.