| 摘要 |
A resist protection film material is provided to ensure formation of a high-quality rectangular pattern even on a protection film by preventing an amine compound from moving out of a photoresist layer. A resist protection film material comprises a polymer represented by the following formula and having at least a terminal amino or sulfonamide group at the end of the polymer. In formula, (P) represents the units obtained via the polymerization of polymerizable compounds; R1 is a single bond or C1-C10 linear, branched or cyclic alkylene group; each of R2 and R3 is H, a C1-C20 linear, branched or cyclic alkyl or -SO2R4, wherein any pair of R1 and R2, R1 and R3 and R2 and R3 are optionally bonded to each other to form a ring; R4 is a C1-C10 linear, branched or cyclic alkyl or C6-C20 aryl optionally containing at least one of ether and ester groups and totally or partially substituted with fluorine atoms in the positions of hydrogen atoms.
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