| 摘要 |
<p>A memory cell (106) includes a first electrode (120), a second electrode (122), a layer of phase change material (124) extending from a first contact (130) with the first electrode to a second contact (132) with the second electrode, and a sidewall spacer (126) contacting the second electrode and a sidewall (128) of the layer of phase change material adjacent to the second contact.</p> |
