| 摘要 |
A semiconductor device includes a semiconductor substrate (1) of a first conductivity type, a semiconductor layer (2) of the first conductivity type formed on the semiconductor substrate (1) and having an active region and an edge termination region surrounding the active region, a first semiconductor region (8) of a second conductivity type formed in the edge termination region adjacent to an edge of the active region, a second semiconductor region (7) of a second conductivity type buried in the edge termination region in a sheet or mesh shape substantially in parallel with a surface of the semiconductor layer (2), a first electrode (3) formed on the active region of the semiconductor layer (2) and a part of the first semiconductor region (8), and a second electrode (4) formed on the bottom surface of the semiconductor substrate (1). |
