| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve a yield and to maintain stability of process development by forming a stably fine pattern at a high step of an edge part. A burying process is performed to bury a stepped part(110) formed on an upper surface of a semiconductor substrate(100). A planarized lower photoresist layer is formed on the upper surface of the semiconductor substrate. An inter layer and an upper photoresist layer pattern are formed on the planarized lower photoresist layer. An inter layer pattern is formed by etching the inter layer. The upper photoresist layer pattern is removed. The lower photoresist layer is etched by using the inter-layer pattern as a mask. The inter layer pattern is removed to form a lower photoresist layer pattern(125).</p> |
