METHODE FOR MENUFACTURING FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to precisely control CD(Critical Dimension) of a floating gate by using a spacer prepared through an ALD(Atomic Layer Deposition) method as an etch stop layer. A poly silicon layer(202) is formed on a semiconductor substrate(201). Plural photoresist patterns are formed on the poly silicon layer to be separated from each other. An oxide layer for a spacer is formed on the photoresist pattern. The oxide layer for a spacer to form a spacer on both sidewalls of the photoresist patterns. The poly silicon layer is etched by using the photoresist pattern and the spacer as etch stop layers to form plural poly silicon layer patterns(206). The photoresist pattern and the spacer formed on the poly silicon layer pattern are removed. The oxide layer for a spacer is formed by using an ALD method.