| 摘要 |
A CMOS(Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method thereof are provided to improve the uniformity in a chip by uniformly forming a thickness of a dielectric remaining on a pixel array. A color filter layer(160) and a micro lens(180) are sequentially formed on a first protective layer(130) of a pixel unit. A top conductive layer(190) is formed on the first protective layer of a logic pad unit. As a part of the top conductive layer of the logic pad unit is exposed, a second protective layer(140) is formed on the protective layer. A third protective layer(150) is formed on the second protective layer as the top conductive layer is exposed. The first protective layer and the third protective layer are oxide layers and the second protective layer is a silicon nitride layer. A dielectric(120) is formed between a substrate(110) and the protective layer.
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