发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 A chemical vapor deposition apparatus is provided to manufacture a large quantity of substrates having uniform growth rate and composition by increasing the stacking number of the substrates as deposition objects in limited internal space without expanding outer diameters of substrate holding parts. A chemical vapor deposition apparatus(100) comprises an external chamber(110) having a gas inflow part(111) and a gas exhaust part(113), an internal chamber(120) which has disposition holes(122) formed in an outer surface thereof correspondingly to a vertical surface of the external chamber and is disposed inside the external chamber, a heating part(130) disposed inside the internal chamber to provide the internal chamber with heat, substrate holding parts(140) which are rotatably disposed in the disposition holes to hold at least one substrate(2), and a drive part(150) which is connected to the substrate holding parts by means of power transfer unit to provide the substrate holding parts with power to rotate the substrate holding parts.
申请公布号 KR100790729(B1) 申请公布日期 2008.01.02
申请号 KR20060125826 申请日期 2006.12.11
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, CHANGSUNG SEAN;JUNG, JOUNG SUL;KIM, BUM JOON;HONG, JONG PA
分类号 C23C16/00;H01L21/205 主分类号 C23C16/00
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