TFT, METHOD FOR MANUFACTURING OF THE SAME, LIQUID CRYSTAL DISPLAY USING THE SAME AND METHOD FOR MANUFACTURING OF THE SAME

摘要

A TFT(Thin Film Transistor), a fabrication method of the same, an LCD using the same, and a fabrication method of the same are provided to prevent an occurrence of a space between a semiconductor layer and a substrate by forming a trench in a central portion of a gate dielectric layer and forming a magnetization metal within the trench. A gate electrode(112) is formed at a predetermined portion on a substrate(111). A gate dielectric layer(113) is formed on an entire surface of the substrate including the gate electrode. A trench(117) is formed in a surface of the gate dielectric layer corresponding to the central portion of the gate electrode, and has a predetermined depth. A magnetization metal(116) is formed in the trench. A semiconductor layer(114) surrounds an upper portion of the magnetization metal, and is formed of a nano material coupled with an upper portion of the magnetization metal by a magnetic-field particle. A source electrode(120) and a drain electrode(121) are separated at both sides of the semiconductor layer at a predetermined interval.