TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

A transistor and a method for fabricating the same are provided to form a buried gate electrode by using a trench process. An isolation layer(104) is formed on a top surface of a silicon substrate(101). A first drift region(102) and a second drift region(103) are formed in a constant interval within the top surface of the silicon substrate in order to surround the isolation layer. A gate electrode(107) is formed by inserting a gate insulating layer into the silicon substrate between the first drift region and the second drift region. A source/drain impurity region(108) are formed within the top surface of the silicon substrate of both sides of the gate electrode. The height of the top surface of the gate electrode is equal to the height of the top surface of the silicon substrate.