<p>The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.</p>
申请公布号
EP1872413(A1)
申请公布日期
2008.01.02
申请号
EP20060733111
申请日期
2006.04.12
申请人
RENEWABLE ENERGY CORPORATION ASA;UNIVERSITETETET I OSLO;INSTITUTT FOR ENERGITEKNIKK
发明人
ULYASHIN, ALEXANDER;BENTZEN, ANDREAS;SVENSSON, BENGT;HOLT, ARVE;SAUAR, ERIK