METHOD OF FORMING MOSFET DEVICE

摘要

A method for fabricating a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) device is provided to improve decrease of carrier mobility due to a trap and reliability of a gate dielectric by performing an annealing process in order to inject fluorine gas into an interface of the gate dielectric. A first dielectric(110) is formed on a semiconductor substrate(100). A plasma nitridation is performed on the first dielectric. A second gate dielectric(120) is formed on the first gate dielectric on which the plasma nitridation is performed. An annealing process is performed to implant fluorine into an interface of the second gate dielectric and the first gate dielectric. The first dielectric is grown by using SiO2 to have a thickness of 0 nm over up to 1 nm. The second gate dielectric is formed by using an insulating material having a high-k(dielectric constant) through an ALD(Atomic Layer Deposition) method to have a thickness of 0 nm over up to 2 nm.