| 摘要 |
An aqueous polishing composition for a semiconductor substrate, and a method for polishing a semiconductor substrate by using the composition are provided to reduce the dishing of interconnect metal by accelerating the removing velocity of tantalum-containing materials, thereby protecting a low dielectric layer from a cap layer. An aqueous polishing composition comprises 0.05-50 wt% of an abrasive; and 0.001-5 wt% of iota carrageenan which has the concentration useful for accelerating the removing velocity of tantalum, tantalum nitride and other tantalum-containing materials. Preferably the coating whose removing velocity is reduced by the iota carrageenan, is selected from the group consisting of SiC, SiCN, Si3N4 and CDO; and the abrasive is selected from an inorganic oxide, a metal boride, a metal carbide, a metal nitride and a polymer particle.
|
