| 摘要 |
A nonmagnetic material-noncontact layer forming a fixed magnetic layer 35 is formed using CoFe, a nonmagnetic material-contact layer 55 is formed using Co, and an NOL 54 is provided between the nonmagnetic material-noncontact layer 53 and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Ñ. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate ( W R/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved to a satisfactory level. The NOL is formed by oxidation of layer 53 and has a mirror reflection effect. In one embodiment the NOL has intermittent portions and Cr oxide layers. |
