发明名称 |
Simplified high q inductor substrate |
摘要 |
An integrated circuit with a buried layer (e.g., 105) for increasing the Q of an inductor formed in the integrated circuit. The substrate includes a highly doped buried layer (e.g., 105) formed between less doped layers. This provides a high Q inductor while preserving device and latchup characteristics. The inductor may also include an increased thickness conductive layer (e.g., 130) in the inductor to further increase Q. The present invention is also directed to a low loss interconnect. <IMAGE> |
申请公布号 |
EP0999580(B1) |
申请公布日期 |
2008.01.02 |
申请号 |
EP19990308700 |
申请日期 |
1999.11.02 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
TSU-RONG CHU, JEROME;LABARRE, JOHN D.;LIN, WEN;MILLER, BLAIR |
分类号 |
H01L21/02;H01L21/822;H01L21/205;H01L21/285;H01L21/77;H01L23/522;H01L23/64;H01L27/04;H01L27/08 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|