TFT, METHOD FOR MANUFACTURING OF THE SAME, LIQUID CRYSTAL DISPLAY USING THE SAME AND METHOD FOR MANUFACTURING OF THE SAME

摘要

A TFT(Thin Film Transistor), a fabrication method thereof, an LCD using the same and a fabrication method thereof are provided not to require an additional process for crystallization as in a poly silicon TFT. A gate electrode(112) is formed at a predetermined portion on a substrate(111). A gate dielectric layer(113) is formed on an entire substrate including the gate electrode. A magnetization metal(116) is formed on the gate dielectric layer at a central portion of the gate electrode. A semiconductor layer(114) is formed to surround the magnetization metal, and is formed of a nano-material coupled with a side surface of the magnetization metal by a magnetic-field particle. A source electrode(120) and a drain electrode(121) are separated at both sides of the semiconductor layer at a predetermined interval.