| 摘要 |
<p>A phase change memory device and a manufacturing method thereof are provided to prevent loss in etching and thermal cross-talk by diagonally arranging a phase change layer and an upper electrode across an adjacent cell. A semiconductor substrate has plural bar-shaped active regions(200). Plural first word lines(201) and plural second word lines(202) are alternatively arranged along a direction perpendicular to the active region on the substrate. A source region(203a) is formed on the active region between the first word line and the second word line. A drain region(203b) is formed on the active region between the first word lines and the second word lines. A plurality of contacts(204) are formed on the source and drain regions. A dot-type lower electrode(205) is contacted to each drain region. A common source line(206) is formed and connected to the respective source regions. A lower electrode contact plug(207) is formed and contacted to each lower electrode. A phase change layer(208) is diagonally arranged on the lower electrode contact plug. The phase change layer connects the lower electrode contact plugs that are adjacent to each other. An upper electrode(209) is formed on the phase change layer. An upper electrode plug(210) is formed and contacted to each upper electrode. Plural bit lines(211) are formed and contacted to the upper electrode contact plugs arranged along a direction of the active region.</p> |
