| 摘要 |
<p>A photo mask for slit type contact and a pattern manufacturing method using the same are provided to form a slit type contact corresponding to a desired critical dimension by adding a slit type or a hole type dummy pattern between slit type bit line contact patterns. A photo mask has a slit type contact pattern. The photo mask includes a slit type contact pattern(128) for defining an opening part of a slit type contact and a dummy pattern(130) arranged in a space between slit type contact patterns of a predetermined size and more. The dummy pattern is formed with one of a pattern having one slit, a slit type pattern at least two slit type patterns arranged in parallel to each other, and at least two hole type patterns arranged serially to each other. The silt type dummy pattern has the same long axis as the axis of the slit type contact pattern. The width of the silt type dummy pattern is equal to and less than 1/2 of the width of the slit type contact pattern.</p> |
