| 摘要 |
<p>A method for forming a fine pattern of a semiconductor device is provided to share dummy patterns and to reduce a size of a block by overlapping space regions of the dummy pattern. A polysilicon layer and a first photoresist layer pattern having a first dummy pattern are formed on a semiconductor substrate(100). The polysilicon layer is etched by using the first photoresist layer pattern as a mask, in order to remove the first photoresist layer pattern. A second photoresist layer pattern having a second dummy pattern is formed on an etched upper part of the polysilicon layer to overlap an edge part of the second dummy pattern on an edge part of the first dummy pattern. The polysilicon layer is etched by using the second photoresist layer pattern as a mask. A polysilicon layer pattern(117) is formed by removing the second photoresist layer pattern.</p> |
