| 摘要 |
<p>A method for detecting defocus of an exposure process is provided to rapidly determine a defocus state and improve the process time and final yield of a device by directly measuring a collapse pattern intentionally inserted into a scribe lane region. An exposure mask is prepared in which a chip formation position is opened to be a predetermined pattern shape and a scribe lane formation position is opened to be a collapse pattern shape. An exposure process using the exposure mask is performed on a wafer coated with photoresist. The resultant structure is developed to fabricate a wafer that includes a chip region having a predetermined pattern shape and a scribe lane region having a collapse pattern. The collapse pattern is inspected by using optical measurement equipment. A pattern in the chip region can be an L/S(line and space) pattern or a contact hole pattern.</p> |
