VARIABLE RESISTANCE RANDOM ACCESS MEMORY DEVICE COMPRISING N+ INTERFACIAL LAYER

摘要

A variable resistance random access memory is provided to use a low-cost metal as a lower electrode by forming an n+ interface layer between the lower electrode and an n buffer layer and to decrease a manufacturing cost. A variable resistance random access memory includes a lower electrode(20), an n+ interface layer(22), a buffer layer(24), an oxide layer(26), and an upper electrode(28). The n+ interface layer is formed on the lower electrode. The buffer layer is formed on the n+ interface layer. The oxide layer is formed on the buffer layer and has a variable resistance. The upper electrode is formed on the oxide film. The oxide film is made of a p-type transition metal oxide.