| 摘要 |
A method for depositing an oxide film using a plasma enhanced chemical vapor deposition apparatus is provided to discharge ions from a lift pin by increasing an O2 gas flow rate or an O2 power during an O2 power lift process. An plasma enhanced chemical vapor deposition apparatus includes a wafer(100), a susceptor(102), and a shadow frame(104). An oxide film, such as a TEOS(Tetra Ethyl Ortho Silicate), is deposited on the wafer. The susceptor applies heat on the wafer. The shadow frame prevents a delamination of the wafer. The susceptor elevates a wafer and provides heat to the wafer by using a heating coil, such that a deposition efficiency is improved. A lift pin(108), which is arranged on a pin plate(106), penetrates the wafer and supports the wafer. The shadow frame maintains a constant distance between the wafer and a plasma gas spray hole(110).
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