Method of Nano pyramid type structure on wafer using silicon dry etching and Gate memory using the structure,申请号KR20050043406-传众专利搜索

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发明名称	Method of Nano pyramid type structure on wafer using silicon dry etching and Gate memory using the structure
摘要
申请公布号	KR100789987(B1)	申请公布日期	2008.01.02
申请号	KR20050043406	申请日期	2005.05.24
申请人		发明人
分类号	H01L21/3065;H01L21/8247;H01L27/115	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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