发明名称 Magnetoresistive effect element and magnetic memory device
摘要 Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain Fe<SUB>a</SUB>Co<SUB>b</SUB>Ni<SUB>c</SUB>B<SUB>d </SUB>(in the chemical formula, a, b, c and d represent atomic %. 5<=a<=45, 35<=b<=85, 0<c<=35, 10<=d<=30. a+b+C+d=100).
申请公布号 US7315053(B2) 申请公布日期 2008.01.01
申请号 US20040480242 申请日期 2004.07.30
申请人 SONY CORPORATION 发明人 HOSOMI MASANORI;MIZUGUCHI TETSUYA;OHBA KAZUHIRO;BESSHO KAZUHIRO;YAMAMOTO TETSUYA;KANO HIROSHI
分类号 B60S5/00;H01L29/76;B21D1/12;G01R33/09;G11C11/15;H01F10/16;H01F10/187;H01F10/30;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/10 主分类号 B60S5/00
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