发明名称 |
Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making |
摘要 |
Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.
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申请公布号 |
US7314799(B2) |
申请公布日期 |
2008.01.01 |
申请号 |
US20050293261 |
申请日期 |
2005.12.05 |
申请人 |
SEMISOUTH LABORATORIES, INC. |
发明人 |
MERRETT JOSEPH NEIL;SANKIN IGOR |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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