发明名称 |
Decoupling capacitor density while maintaining control over ACLV regions on a semiconductor integrated circuit |
摘要 |
In one embodiment, a method of controlling the across-chip line-width variation (ACLV) on a semiconductor integrated circuit includes forming an ACLV controlled region including a plurality of semiconductor devices each having a gate structure and arranging the plurality of semiconductor devices to have a substantially uniform spacing between each gate structure. The method also includes forming a decoupling capacitor region adjacent to the ACLV controlled region. The decoupling capacitor region may include a plurality of capacitor structures each having a conductive structure, such as a polysilicon electrode, for example.
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申请公布号 |
US7315054(B1) |
申请公布日期 |
2008.01.01 |
申请号 |
US20050174713 |
申请日期 |
2005.07.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MOENCH JERRY D.;PATTISON JAMES C. |
分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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