Composition for a bottom-layer resist

摘要

A composition for a bottom-layer resist, having superior anti-refractivity and dry-etch resistance for use in a bi-layer resist process employing a light source at a wavelength of 193 nm or below, is disclosed. The composition for the bottom-layer resist contains a polymer represented by formula 1: In formula 1, R is hydrogen or a methyl group, m/(m+n) is about 0.5 to about 1.0 and n/(m+n) is 0 to about 0.5.