| 摘要 |
<p>A thin film semiconductor device, a lateral bipolar thin film transistor, a hybrid thin film transistor, a MOS thin film transistor and a method of manufacturing the thin film transistor are provided to form any one of the devices on an insulating substrate having low heat resistance. At least one MOS transistor includes a source region, a channel region and a drain region, formed in a semiconductor thin film(105) formed on an insulating substrate. A gate electrode is formed on a surface of the channel region via an insulation film. At least one lateral bipolar transistor includes an emitter(102), a base(103) and a collector(104), which are formed in the semiconductor thin film formed on the same insulating substrate as the MOS transistor.</p> |
