SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a fabricating method thereof are provided to minimize characteristic deterioration of a gate insulating layer and improve an operation efficiency of a gate electrode. A semiconductor substrate(410) has a first region(A) and a second region(B). Gate insulating layers are formed on the first region and the second region, and gate electrodes(422a,422b) are formed on the gate insulating layers, respectively. Each of the gate electrodes has a first conductive layer and a second conductive layer formed on the first conductive layer. The first conductive layer of the gate electrodes has an implanted metal ion, in which concentration of the metal ion is higher at a portion adjacent to the gate insulating layer.